2003. 12. 2 1/2 semiconductor technical data kdv214e revision no : 3 tv tuning. features h high capacitance ratio : c2v/c25v=6.3(typ.) h low series resistance : r s =0.57 ? (max.) h excellent c-v characteristics, and small tracking error. h useful for small size tuner. maximum rating (ta=25 ? ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) variable capacitance diode silicon epitaxial planar diode characteristic symbol rating unit reverse voltage v r 32 v junction temperature t j 125 ? storage temperature range t stg -55 q 125 ? characteristic symbol test condition min. typ. max. unit reverse current i r v r =28v - - 10 na capacitance c 2v v r =2v, f=1mhz 14.15 - 15.75 pf capacitance c 25v v r =25v, f=1mhz 2.06 - 2.35 pf capacitance ratio c 2v /c 25v 6.3 - - - series resistance r s v r =5v, f=470mhz - - 0.57 ? type name marking o u c(max.)-c(min.) " 0.02 c(min.) (v r =2~25v) note : available in matched group for capacitance to 2.0%.
2003. 12. 2 2/2 kdv214e revision no : 3 10 reverse current i (a) r t 0 reverse voltage v (v) r i - v rr 10 30 20 40 total capacitance c (pf) 0 10 1 reverse voltage v (v) r tr c - v 50 5 10 15 20 f=1mhz -1.5 -1.0 10 1 reverse voltage v (v) r tr r ? (log c ) / ? (log v ) - v tr ? (log c ) / ? (log v ) 50 -0.5 0 s series resistance r ( ? ) 0 10 1 reverse voltage v (v) r sr r - v 50 0.5 f=470mhz 0.6 0.3 0.4 0.1 0.2 -12 10 -11 10 -13 10 -10
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